The luminescence decay of excitons in disordered low-dimensional semiconductors with
quantum confinement is shown experimentally to be characterized by a nonexponential …

Applying the concept of materials design for transparent conductive oxides to layered
oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as …

In the first part of this contribution we review the properties of the electron-hole plasma in
bulk II–VI semiconductors putting some emphasis on the comparison of the observed band …

The authors estimate, by reviewing the available photoluminescence data, the band
alignments at heterojunctions of Zn (Cd) S (Se) semiconductors. The photoluminescence …

The optical and electronic properties of a wide-gap (∼ 3.3 eV) layered oxychalcogenide,
La2CdO2Se2, were examined using epitaxial thin films prepared by a reactive solid-phase …

After a brief historical remark about the evolution of scientific interest in wide gap II–VI
compounds, we review the various laser processes which have been identified in bulk …

The critical thicknesses of quantum wells in the common-anion superlattices ZnSe-CdSe
and ZnS-CdS have been determined experimentally for comparison with calculations …

Optical properties of binary Zn (Cd) S (Se) superlattices are reviewed. The absorption
spectra of a range of ZnSe-ZnS strained layer superlattices (SLSs) are compared with the …

The growth by metalorganic vapour phase epitaxy (MOVPE) of common anion strained layer
superlattices (SLSs) based on the systems ZnSe-CdSe and ZnS-CdS, is reported. Such …

Recent work on binary superlattices of the Zn (Cd) S (Se) family is reviewed, with emphasis
on the optical properties which make such superlattices of potential application in visible …