DC magnetron sputter deposition in pure helium gas: formation of porous films or gas/solid nanocomposite coatings

S Ibrahim, A Fernández, P Brault, A Sauldubois… - Vacuum, 2024 - Elsevier
Magnetron sputtering of two materials (Aluminum and Silicon) was performed in He gas and
led to the formation of very different porous thin films: a fiberform nanostructure or a gas/solid …

A molecular dynamics simulation study of temperature and depth effect on helium bubble releasing from Ti surface

L Liang, M Ma, W Xiang, Y Wang, Y Cheng… - Journal of Alloys and …, 2015 - Elsevier
Using molecular dynamics simulation, the effect of environment temperature and depth of
helium bubble on its volume, pressure and releasing process in metal Ti is researched. First …

Diffusion behavior of cumulative He doped in Cu/W multilayer nanofilms at room temperature

L Wang, W Liu, Y Li, YL Shi, YX Lao, XB Lu… - Chinese Physics …, 2016 - iopscience.iop.org
Cu/W multilayer nanofilms are prepared in pure Ar and He/Ar mixing atmosphere by the rf
magnetron sputtering method. The cross-sectional morphology and the defect distribution of …

Theoretics-directed effect of copper or aluminum content on the ductility characteristics of Al-based (Al3Ti, AlTi, AlCu, AlTiCu2) intermetallic compounds

Y Li, XJ Ma, QJ Liu, GX Kong, HX Ma… - Chinese …, 2016 - iopscience.iop.org
First-principle simulations have been applied to investigate the effect of copper (Cu) or
aluminum (Al) content on the ductility of Al 3 Ti, AlTi, AlCu, and AlTiCu 2 alloys. The …

[PDF][PDF] 温度及深度对钛中氦泡释放过程影响的分子动力学研究

梁力, 谈效华, 向伟, 王远, 程焰林, 马明旺 - 物理学报, 2013 - wulixb.iphy.ac.cn
利用分子动力学模拟方法对温度及He 泡深度给金属Ti 内He 泡的体积, 压强和释放过程等带来
的影响进行了研究. 首先, 通过研究室温下He 泡在金属Ti 内不同深度处的状态, 得到He …

The Evolution Behavior of Defects in the Nanofilms of W/Cu and W Probed by Doppler Broadening Positron Annihilation Spectroscopy

L Wang, AH Deng, K Wang, Y Wang, XB Lu… - Defect and Diffusion …, 2017 - Trans Tech Publ
W/Cu multilayer nanofilms and pure W nanofilms were prepared in pure Ar and He/Ar mixing
atmosphere by radio frequency magnetron sputtering method. The defect evolution of the …

Defect Characteristics of Be-doped GaSb Film Grown on GaAs

X Guo, Y Chen - 2018 3rd International Conference on Electrical …, 2018 - atlantis-press.com
The defect characteristics of the Be-doped GaSb and no-doped GaSb film grown on GaAs
and GaSb substrate respectively were analysed by the method of molecular beam epitaxy …

[引用][C] 高温退火后含He 纳米晶钛膜中He 相关缺陷的演化

李悦, 邓爱红, 刘莉, 王康, 谢莎 - 材料研究学报, 2013

[引用][C] 纳米晶钨膜的沉积工艺研究及微结构表征

王玲, 邓爱红, 汪渊, 王康, 王一航, 王飞, 安竹 - 四川大学学报: 自然科学版, 2015

[引用][C] Diffusion Behavior of Cumulative He Doped in Cu/W Multilayer Nanofilms at Room Temperature

王玲, 刘望, 李悦, 石云龙, 劳远侠, 卢晓波, 邓爱红… - 中国物理快报: 英文版, 2016