A semiconductor injection laser that differs in a fundamental way from diode lasers has been
demonstrated. It is built out of quantum semiconductor structures that were grown by …

摘要因量子级联激光器的工作波长可覆盖红外到太赫兹波段, 在大气污染检测, 工业污染监控,
医学诊断, 毒品及生化危险品灵敏检测, 自由空间通信等领域具有广泛的应用前景. 从1994 …

We report on room-temperature continuous-wave (CW) operation of/spl lambda//spl sim/8.2
μm quantum cascade lasers grown by metal-organic chemical vapor deposition without …

This study presents an experimental demonstration of the crucial role of compositional
interdiffusion at interfaces in GaAs/AlGaAs alternating superlattices for developing the …

We present high-power surface-emitting second-order distributed feedback quantum-
cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular …

The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on
QCL performance, and establishing correlations between epitaxial growth and materials …

Sharing the advantages of high optical power, high efficiency and design flexibility in a
compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser …

We present in this work a simple quantum well (QW) structure consisting of GaAs wells with
AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a …

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication
of new types of devices demands heterostructures with special features, such as large total …

We report entirely MOVPE-grown QCL lasers operating around 9μm. High-resolution X-ray
diffraction analysis and TEM data confirm precise thickness and composition control for the …