Perovskite materials have driven tremendous advances in constructing electronic devices
owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties …

Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

Hafnia‐based compounds have considerable potential for use in nanoelectronics due to
their compatibility with complementary metal–oxide–semiconductor devices and robust …

In the field of active‐matrix organic light emitting display (AMOLED), large‐size and ultra‐
high‐definition AMOLED applications have escalated the demand for the integration density …

As the scale‐down and power‐saving of silicon‐based channel materials approach the limit,
oxide semiconductors are being actively researched for applications in 3D back‐end‐of‐line …

Hafnia-based ferroelectric memory devices with excellent ferroelectricity, low power
consumption, and fast operation speed have attracted considerable interest with the ever …

The HfO2-based ferroelectric tunnel junction has received outstanding attention owing to its
high-speed and low-power characteristics. In this work, aluminum-doped HfO2 (HfAlO) …

The rapid increase in CPU processing speeds has significantly advanced artificial
intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput …

Abstract BaTiO 3 (BTO) ferroelectric films, which are renowned for their lead-free
compositions, superior stability, and absence of a wake-up effect, are promising candidate …

Binary oxides of Hf 0.5 Zr 0.5 O 2 (HZO) have attracted considerable attention of the
ferroelectric research community, owing to their excellent ferroelectric properties and CMOS …