Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

Measurement—the act of measuring physical properties that we perform—has the potential
to contribute to the successful advancement of sciences and society. To open doors in …

The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …

We investigated the ability of a photo-assisted electrochemical (PEC) etching process to
remove the damage that dry etching causes in the near-surface region of GaN samples. The …

In this study, we used scanning internal photoemission microscopy (SIPM) to investigate
damage on the n-GaN surface, which were induced by inductive coupled plasma (ICP) …

We have investigated the generation of electrical damage in n-GaN films following treatment
in a CF 4 plasma, employing capacitance–voltage and steady-state photocapacitance …

Deep traps in n‐type α‐Ga2O3 grown by mist chemical vapor deposition are analyzed by
the photocapacitance method and deep‐level optical spectroscopy. The trap levels at …

In this study, the metal–organic-vapor-phase-epitaxial growth behavior and electrical
properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive …

In this paper, we report the impact of the HCl treatment of reactive-ion-etching-treated GaN
(RIE-treated GaN) surfaces in fabricating AlGaN/GaN structures by regrowing an AlGaN …

In this paper, multi-channel AlGaN/GaN Schottky diodes (MC-SBDs) with W/Au and Ni/Au
anode metal were fabricated on the Si substrates, and the effect of post anode annealing …