EA Preble, L Liu, AD Hanser, NM Williams… - US Patent …, 2011 - Google Patents
In a method for making a GaN article, an epitaxial nitride layer is deposited on a single- crystal Substrate. A 3D nucle ation GaN layer is grown on the epitaxial nitride layer by HVPE …
RJ Mears, H Takeuchi - US Patent 9,899,479, 2018 - Google Patents
(57) ABSTRACT A semiconductor device may include a semiconductor sub strate, and a plurality of field effect transistors (FETs) on the semiconductor substrate. Each FET may …
R Mears, H Takeuchi, E Trautmann - US Patent 9,275,996, 2016 - Google Patents
(57) ABSTRACT A semiconductor device may include a substrate, and a plu rality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin …
RJ Mears - US Patent 10,170,560, 2019 - Google Patents
(57) ABSTRACT A method for making a semiconductor device may include forming a plurality of stacked groups of layers on a semi conductor substrate, with each group of layers …
AW Saxler - US Patent 7,544,963, 2009 - Google Patents
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III …
RP Smith, ST Sheppard - US Patent 7,709,269, 2010 - Google Patents
Transistors are fabricated by forming a protective layer hav ing a first opening extending therethrough on a Substrate, forming a dielectric layer on the protective layer having a …
RJ Mears, TJK Liu, H Takeuchi - US Patent 10,084,045, 2018 - Google Patents
A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (STI) regions in the substrate, and source and drain …
RJ Mears, TJK Liu, H Takeuchi - US Patent 9,722,046, 2017 - Google Patents
(57) ABSTRACT A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (STI) regions in the Substrate …
R Mears, H Takeuchi, E Trautmann - US Patent 9,406,753, 2016 - Google Patents
(57) ABSTRACT A semiconductor device may include an alternating stack of Superlattice and bulk semiconductor layers on a Substrate, with each Superlattice layer including a …