Nanometre-thin indium tin oxide for advanced high-performance electronics

S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu - Nature materials, 2019 - nature.com
Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical
transmittance and electrical conductivity, its degenerate doping limits exploitation as a …

A scalable cryo-CMOS controller for the wideband frequency-multiplexed control of spin qubits and transmons

JPG Van Dijk, B Patra, S Subramanian… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
Building a large-scale quantum computer requires the co-optimization of both the quantum
bits (qubits) and their control electronics. By operating the CMOS control circuits at cryogenic …

Foveros: 3D integration and the use of face-to-face chip stacking for logic devices

DB Ingerly, S Amin, L Aryasomayajula… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
This paper presents the key silicon features of Intel's 3D stacking technology, Foveros, as it
is used to enable logic-on-logic die stacking. A robust face-to-face die connection is enabled …

MRAM as embedded non-volatile memory solution for 22FFL FinFET technology

O Golonzka, JG Alzate, U Arslan, M Bohr… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
This paper presents key features of MRAM-based non-volatile memory embedded into Intel
22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for …

13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique

L Wei, JG Alzate, U Arslan, J Brockman… - … Solid-State Circuits …, 2019 - ieeexplore.ieee.org
STT-MRAM has been emerging as a very-promising high-density embedded nonvolatile
memory (eNVM)[1, 2]. Embedded Flash memory has been the leading eNVM technology …

Intel 22nm FinFET (22FFL) process technology for RF and mm wave applications and circuit design optimization for FinFET technology

HJ Lee, S Rami, S Ravikumar, V Neeli… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
Intel 22FFL is a unique FinFET process technology optimized for RF and mmWave
applications supporting superior RF performance to planar technologies with both ft and f …

8.1 Lakefield and Mobility Compute: A 3D Stacked 10nm and 22FFL Hybrid Processor System in 12×12mm2, 1mm Package-on-Package

W Gomes, S Khushu, DB Ingerly… - … Solid-State Circuits …, 2020 - ieeexplore.ieee.org
The Lakefield processor combines heterogeneous 3D die stacking also called Foveros, with
hybrid computing to enable a new class of small form factor mobile products. The stacked …

Non-volatile RRAM embedded into 22FFL FinFET technology

O Golonzka, U Arslan, P Bai, M Bohr… - 2019 Symposium on …, 2019 - ieeexplore.ieee.org
This paper presents key specifications of RRAM-based nonvolatile memory embedded into
Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology …

Device design guideline of 5-nm-node FinFETs and nanosheet FETs for analog/RF applications

JS Yoon, RH Baek - IEEE Access, 2020 - ieeexplore.ieee.org
Analog/RF performances of 5-nm node bulk fin-shaped field-effect transistors (FinFETs) and
nanosheet FETs (NSFETs) were investigated and compared thoroughly using fully …

1.4 5G wireless communication: An inflection point

V Ilderem - 2019 IEEE international solid-state circuits …, 2019 - ieeexplore.ieee.org
The 5G era is upon us, ushering in new opportunities for technology innovation across the
computing and connectivity landscape. The advent of the Internet of Things has resulted in …