We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated
in GaAs/AlGaAs. There is a considerable interest in such devices since they lend …

Terahertz regime of the electromagnetic spectrum which coarsely extends from 100 GHz to
10 THz has been treated as the bandgap for a long time mainly due to the scarcity of …

Broadband pulsed THz emission with peak power in the sub-mW range has been observed
experimentally during avalanche switching in a gallium arsenide bipolar junction transistor …

This thesis describes the reliable design of tunnel diode and resonant tunneling diode
(RTD) oscillator circuits. The challenges of designing with tunnel diodes and RTDs are …

This letter reports the highest fundamental oscillator operating frequency of 120 GHz for
gallium arsenide (GaAs)‐based Gunn diode. The letter describes the design, fabrication …

Under certain conditions, plasma instabilities associated with streaming motion of carriers
taking place in n+ n n+ diodes can lead to current oscillations. The origin of the …

We explore and discuss the complex electron dynamics inside a low-doped n-type InP bulk
embedded in a sub-THz electric field, fluctuating for the superimposition of an external …

Detectors and sensors are an integral part of modern electronics and are crucial to highly
sensitive applications. Metal-Insulator-Metal (MIM) tunnel junctions have been explored for …

The Gunn oscillation in an AlGaAs/InGaAs high-electron mobility transistor is numerically
simulated. Using the commercial drift-diffusion simulator with a mobility model considering …

A full-band Cellular Monte Carlo (CMC)/full-wave Maxwell simulator is presented and
applied to the global modeling of high-frequency submillimeter and microwave transistors. In …