Integrated Urinalysis Devices Based on Interface‐Engineered Field‐Effect Transistor Biosensors Incorporated With Electronic Circuits
Y Yang, J Wang, W Huang, G Wan, M Xia… - Advanced …, 2022 - Wiley Online Library
Urinalysis is attractive in non‐invasive early diagnosis of bladder cancer compared with
clinical gold standard cystoscopy. However, the trace bladder tumor biomarkers in urine and …
clinical gold standard cystoscopy. However, the trace bladder tumor biomarkers in urine and …
Monolithic 3D integration of analog RRAM‐based computing‐in‐memory and sensor for energy‐efficient near‐sensor computing
In the era of the Internet of Things, vast amounts of data generated at sensory nodes impose
critical challenges on the data‐transfer bandwidth and energy efficiency of computing …
critical challenges on the data‐transfer bandwidth and energy efficiency of computing …
Triple-stack ZnO/AlZnO/YZnO heterojunction oxide thin-film transistors by spray pyrolysis for high mobility and excellent stability
We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film
transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350° C on an …
transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350° C on an …
Spray pyrolyzed amorphous InGaZnO for high performance, self‐aligned coplanar thin‐film transistor backplanes
High‐performance, spray‐pyrolyzed amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐
film transistor (TFT) with self‐aligned (SA) coplanar structure is demonstrated. The spray …
film transistor (TFT) with self‐aligned (SA) coplanar structure is demonstrated. The spray …
The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer
S Zhang, L Weng, B Liu, D Kuang, X Liu, B Jiang… - Vacuum, 2023 - Elsevier
For improving the properties of indium-gallium-tin oxide (IGTO) thin film transistors (TFTs)
based on solution method, indium-zinc oxide (IZO) thin film was used as a modification …
based on solution method, indium-zinc oxide (IZO) thin film was used as a modification …
Performance improvement of amorphous thin-film transistors with solution-processed InZnO/InMgZnO bilayer channels
L Weng, S Zhang, D Kuang, B Liu, X Liu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We present a dual active layer structure composed of indium–zinc oxide (InZnO) and indium–
magnesium–zinc oxide (InMgZnO), which is fabricated using a simple solution process. By …
magnesium–zinc oxide (InMgZnO), which is fabricated using a simple solution process. By …
Saturation Mobility of 100 cm2 V–1 s–1 in ZnO Thin-Film Transistors through Quantum Confinement by a Nanoscale In2O3 Interlayer Using Spray Pyrolysis
In this study, we present a comprehensive study on the fabrication and characterization of
heterojunction In2O3/ZnO thin-film transistors (TFTs) aimed at exploiting the quantum …
heterojunction In2O3/ZnO thin-film transistors (TFTs) aimed at exploiting the quantum …
Bilayer channel structure to improve the stability of solution-processed metal oxide transistors under AC stress
In this work, we report solution-processed bilayer channel thin film transistors (TFTs) based
on solution-processed amorphous oxide semiconductors (AOSs) that fulfill both superb …
on solution-processed amorphous oxide semiconductors (AOSs) that fulfill both superb …
Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdOx Bilayer Gate Dielectrics
L Wang, G He, S Jiang, W Wang, X Xu… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work reports gadolinium-doped cerium oxide (CeO 2) as gate dielectric, and
appropriate doping of Gd can effectively prevent oxygen vacancy-related defects in CeO 2 …
appropriate doping of Gd can effectively prevent oxygen vacancy-related defects in CeO 2 …
Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using ap− n Semiconductor Heterojunction Structure
Herein, a heterojunction structure integrating p-type tellurium (Te) and n-type aluminum-
doped indium− zinc-tin oxide (Al: IZTO) is shown to precisely modulate the threshold voltage …
doped indium− zinc-tin oxide (Al: IZTO) is shown to precisely modulate the threshold voltage …