Materials for high-temperature digital electronics

DK Pradhan, DC Moore, AM Francis… - Nature Reviews …, 2024 - nature.com
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Temperature dependent Raman modes of reduced graphene oxide: Effect of anharmonicity, crystallite size and defects

M Sharma, S Rani, DK Pathak, R Bhatia, R Kumar… - Carbon, 2021 - Elsevier
A consolidated effect of anharmonicity, crystallite size and defects has been studied using
temperature dependent Raman spectroscopy of reduced graphene oxide (rGO). The micro …

Development of a machine learning potential for graphene

P Rowe, G Csányi, D Alfè, A Michaelides - Physical Review B, 2018 - APS
We present an accurate interatomic potential for graphene, constructed using the Gaussian
approximation potential (GAP) machine learning methodology. This GAP model obtains a …

[HTML][HTML] Invited Review Article: Error and uncertainty in Raman thermal conductivity measurements

T Beechem, L Yates, S Graham - Review of Scientific Instruments, 2015 - pubs.aip.org
Error and uncertainty in Raman thermal conductivity measurements are investigated via
finite element based numerical simulation of two geometries often employed—Joule-heating …

Exploring thermal expansion of carbon-based nanosheets by machine-learning interatomic potentials

B Mortazavi, A Rajabpour, X Zhuang, T Rabczuk… - Carbon, 2022 - Elsevier
Examination of thermal expansion of two-dimensional (2D) nanomaterials is a challenging
theoretical task with either ab-initio or classical molecular dynamics simulations. In this …

Reliable machine learning potentials based on artificial neural network for graphene

A Singh, Y Li - Computational Materials Science, 2023 - Elsevier
Graphene is one of the most researched two dimensional (2D) material in the past two
decades due to its unique combination of mechanical, thermal and electrical properties …

High-temperature Raman spectroscopy of nano-crystalline carbon in silicon oxycarbide

F Rosenburg, E Ionescu, N Nicoloso, R Riedel - Materials, 2018 - mdpi.com
The microstructure of segregated carbon in silicon oxycarbide (SiOC), hot-pressed at T=
1600° C and p= 50 MPa, has been investigated by VIS Raman spectroscopy (λ= 514 nm) …

Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN

R Cuscó, B Gil, G Cassabois, L Artús - Physical Review B, 2016 - APS
We present a Raman scattering study of optical phonons in hexagonal BN for temperatures
ranging from 80 to 600 K. The experiments were performed on high-quality, single …

The intrinsic temperature-dependent Raman spectra of graphite in the temperature range from 4K to 1000K

HN Liu, X Cong, ML Lin, PH Tan - Carbon, 2019 - Elsevier
Abstract Temperature-dependent (T-dependent) Raman scattering can provide valuable
informations on thermal properties, phonon anharmonicity and electron-phonon coupling of …

Vertically oriented growth of GaN nanorods on Si using graphene as an atomically thin buffer layer

M Heilmann, AM Munshi, G Sarau, M Göbelt… - Nano …, 2016 - ACS Publications
The monolithic integration of wurtzite GaN on Si via metal–organic vapor phase epitaxy is
strongly hampered by lattice and thermal mismatch as well as meltback etching. This study …