Photoluminescence spectroscopy of neutron-irradiated cubic SiC crystals

V Bratus, R Melnyk, O Kolomys, B Shanina… - Materials Science …, 2013 - Trans Tech Publ
Photoluminescence (PL) spectroscopy has been used to characterize neutron-irradiated
cubic silicon carbide crystals. The effects of thermal annealing (600-1100OC) on the PL …

Thermal annealing and evolution of defects in neutron-irradiated cubic SiC

VY Bratus, RS Melnyk, BD Shanina… - … Quantum Electronics & …, 2015 - dspace.nbuv.gov.ua
A careful study of neutron-irradiated cubic SiC crystals (3С-SiC (n)) has been performed
using electron paramagnetic resonance (EPR) in the course of their thermal annealing …

Ingénierie des centres colorés dans SiC pour la photonique et la solotronique

AS Al Atem - 2018 - theses.hal.science
Les défauts ponctuels dans les semi-conducteurs sont étudiés pour la réalisation de bits
quantiques d'information (Qubit). A ce jour, le système le plus développé est le centre NV …

Combined EPR and photoluminescence study of electron and proton irradiated 3C-SiC

A Al Atem, V Bratus, B Canut, J Lefèvre… - Materials Science …, 2019 - Trans Tech Publ
Combined Photoluminescence (PL) and electron paramagnetic resonance (EPR)
spectroscopy have been used to characterize cubic silicon carbide (3C-SiC) samples after …

Calculation of spin-Hamiltonian constants for extended defects (VSi-VC) 0 (Ky5) in silicon carbide polytype 3C-SiC

BD Shanina, VY Bratus - Semiconductor physics, quantum …, 2018 - irbis-nbuv.gov.ua
This work presents theoretical studying the neutral divacancy, ie., the Ky5 center that is one
of the dominant defects in 3C-SiC bulk crystals subjected to relatively high dose of neutron …