Along with deep scaling transistors and complex electronics information exchange networks,
very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power …

As the interconnect delay exceeds the gate delay, the integrated circuit (IC) technology has
evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic …

The transient response, 3 dB bandwidth, and relative stability of undoped‐and doped‐
multilayer graphene nanoribbon (MLGNR) interconnects are investigated based on the …

The size and parameter optimization for the 5-nm carbon nanotube field effect transistor
(CNFET) static random access memory (SRAM) cell was presented in Part I of this article …

With significant reduction in the size of ICs, there has been a massive increase in the
operating speed. Due to this condition, the area available for interconnects within the …

Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC)
and 2.5 D packaging. Both are within the advanced packaging topic for the digital and …

Constant evolution of technology is leading to the improvement of electronical devices.
Smaller, lighter, faster, are but a few of the properties that have been constantly improved …

Al/diamond composites offer promising potential for use as thermal management materials
due to their excellent thermophysical properties. However, few studies have been conducted …

A Cu–carbon hybrid interconnect was recently proposed as an alternate interconnect
structure for future VLSI applications because of its superior electrical performance over its …

Growing only single-walled carbon nanotube (SWCNT) or only multi-walled carbon
nanotube (MWCNT) in a bundle is not feasible practically. Thus, a random number of …