Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Intermodulation distortion in field-effect transistors (FETs) at RF frequencies is analyzed
using the Volterra-series analysis. The degrading effect of the circuit reactances on the …

Extremely compact resistive-feedback CMOS low-noise amplifiers (LNAs) are presented as
a cost-effective alternative to multiple narrowband LNAs using high-Q inductors for …

A low-noise amplifier (LNA) that achieves high third-order input intercept point (IIP3) at RF
frequencies using a nonlinearity cancellation technique is proposed. The circuit tackles the …

Transistors are the backbone of any electronic and telecommunication system but all known
transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a …

Modern wireless communication systems require power amplifiers with high efficiency and
high linearity. CMOS is the technology of choice for complete systems on a chip due to its …

This work investigates the linearization technique based on terminating the LNA input with
low impedance at the low frequencies of the second-order mixing terms. This technique is …

This paper presents a new linearity-improvement feedforward transconductance stage using
inductive source-degeneration amplifiers. The proposed technique is applied to a CMOS RF …

This book describes methods to design distributed amplifiers useful for performing circuit
functions such as duplexing, paraphrase amplification, phase shifting power splitting and …

A third-order intermodulation (IM/sub 3/) cancellation technique using a submixer is
proposed for a low-power low-distortion mixer. The IM/sub 3/cancellation is achieved by …