Lampert triangle formation and relaxation behavior in doped poly (3, 4-ethylenedioxythiophene) devices
The current density–voltage (J–V) characteristics in stainless steel/poly (3, 4-
ethylenedioxythiophene)/Ag devices show the formation of the complete Lampert triangle …
ethylenedioxythiophene)/Ag devices show the formation of the complete Lampert triangle …
Effect of synthesis temperature on the charge transport properties of poly (3-methylthiophene) devices
Low temperature-dependent IV measurement was adopted to investigate an insight into the
effect of synthesis temperature on the field and temperature-dependent charge transport …
effect of synthesis temperature on the field and temperature-dependent charge transport …
Electric conductivity in silicone-carbon black nanocomposites: Percolation and variable range hopping on a fractal
R Neffati, JMC Brokken-Zijp - Materials Research Express, 2019 - iopscience.iop.org
Abstract Effects of various experimental parameters on dc conductivity of Silicone-Carbon
Black (CB) nanocomposites are measured and correlated to the fractal morphology of CB …
Black (CB) nanocomposites are measured and correlated to the fractal morphology of CB …
Role of doping level, electric field and temperature on the charge transport properties of electrochemically polymerized poly (3-butylthiophene) and poly (3 …
In this article, the charge transport properties of electrochemically polymerized poly (3-
butylthiophene)(P3BT) and poly (3-hexylthiophene)(P3HT) devices using a sandwiched …
butylthiophene)(P3BT) and poly (3-hexylthiophene)(P3HT) devices using a sandwiched …
Tuning the charge transport and photo-physical behavior in hybrid poly (3-hexylthiophene) and silver sulfide quantum dot based nanocomposite devices
The charge transport properties are studied in hybrid thin films composed of poly (3-
hexylthiophene) polymer (P3HT) and silver sulfide (Ag 2 S) quantum dots (QDs) by …
hexylthiophene) polymer (P3HT) and silver sulfide (Ag 2 S) quantum dots (QDs) by …
Quantum scattering and its impact on the source–drain current with defect generation in the channel of nanoscale transistors
LF Mao - Indian Journal of Physics, 2020 - Springer
The electrons scattered by the defects in the channel can be described by the time-
dependent Schrödinger equation. An analytical and physical model of the time evolution of …
dependent Schrödinger equation. An analytical and physical model of the time evolution of …