Passivation of grain boundary electronic activity in polycrystalline silicon thin films by heat treatment and hydrogenation

A Magramene, M Moumene, H Hadjoudja… - … International Journal of …, 2023 - Springer
The polycrystalline silicon (poly-Si) thin films are widely used in photovoltaic applications.
However, the main drawback is the electronic activity of the grain boundaries which affects …

Electrical energy generated by amorphous silicon solar panels

B Zaidi, I Saouane, C Shekhar - Silicon, 2018 - Springer
This paper presents studies carried out on amorphous silicon solar panels for electrical
power generation in the city of Hassi Messaoud, Ouargla. The electrical power generation …

Role of TCO films in improving the efficiency of CdS/MoS2 Heterojunction solar cells

B Zaidi, MS Ullah, N Houaidji, S Gagui… - Journal of nano-and …, 2019 - irbis-nbuv.gov.ua
Thin film solar cell is a second generation solar cell that is made by depositing one or more
thin layers. Debutant analysis of the parameters impeding the efficiency of the CdS/MoS2 …

Simulation of single-diode equivalent model of polycrystalline silicon solar cells

B Zaidi, I Saouane, C Shekhar - International Journal of Materials Science …, 2017 - ajnsci.org
A solar module is composed of photons of different energies, and some are absorbed at the
pn junction. A single-diode equivalent model is used to describe the electronic properties of …

Impact of hydrogen passivation on electrical properties of polysilicon thin films

B Zaidi, B Hadjoudja, B Chouial, K Kamli, A Chibani… - Silicon, 2018 - Springer
The effect of hydrogen passivation and heat treatments on the electronic activity at grain
boundaries in thin films of polysilicon deposited by LP-CVD (Low Pressure Chemical Vapor …

Electrical performance of CuInSe2 solar panels using ant colony optimization algorithm

B Zaidi, S Belghit, C Shekhar, M Mekhalfa, B Hadjoudja… - 2018 - essuir.sumdu.edu.ua
Electricity is an essential factor of economic development for all the countries. In recent
years the share of renewable energy in electricity production is growing significantly all over …

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy …

RC Germanicus, F Lallemand, D Chateigner… - Nano …, 2021 - iopscience.iop.org
Progressing miniaturization and the development of semiconductor integrated devices ask
for advanced characterizations of the different device components with ever-increasing …

Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology

FY Lee, YCS Wu, A Joshi, BM Basol, CH Chang… - Journal of Materials …, 2022 - Springer
Differential Hall effect metrology (DHEM) was used to accurately and effectively evaluate the
carrier concentration, mobility, and resistivity depth profiles at nano-scale resolution for BF2 …

Optimal angle of polycrystalline silicon solar panels placed in a building using the ant colony optimization algorithm

I Saouane, A Chaker, B Zaidi, C Shekhar - The European Physical Journal …, 2017 - Springer
This paper describes the mathematical model used to determine the amount of solar
radiation received on an inclined solar photovoltaic panel. The optimum slope angles for …

Analysis of IVT Characteristics of CH3NH3PbBr3 Perovskite Based Solar Cells

B Zaidi, MS Ullah, S Zahra, S Gagui, C Shekhar - 2021 - essuir.sumdu.edu.ua
The IVT characteristics of perovskite based solar cells using hybrid organic-inorganic metal
halide (CH3NH3PbBr3) as one of the material components have been studied. A numerical …