An integrated fuzzy multi-measurement decision-making model for selecting optimization techniques of semiconductor materials

M Al-Samarraay, O Al-Zuhairi, AH Alamoodi… - Expert Systems with …, 2024 - Elsevier
Semiconductor materials play a crucial role in the development of optoelectronics and
power devices. However, their evaluation and selection pose a multi-attribute decision …

InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%

HM Chang, S Gandrothula, S Gee, T Tak… - Japanese Journal of …, 2024 - iopscience.iop.org
We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …

[图书][B] Fabrication and characterisation of microcavity based III-nitride optoelectronics on a microscale

GM de Arriba - 2022 - etheses.whiterose.ac.uk
In this work, the design implementation, fabrication and characterisation on III-nitride
microemitters with microcavity effects grown on c-plane sapphire are presented. Highly …