A 1.7 mW 11b 250 MS/s 2-times interleaved fully dynamic pipelined SAR ADC in 40 nm digital CMOS

B Verbruggen, M Iriguchi… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
A 250 MS/s 2x interleaved 11 bit pipelined SAR ADC in 40 nm digital CMOS is presented.
Each ADC channel consists of a 6b coarse SAR, a dynamic residue amplifier and a 7b fine …

A 12 bit 160 MS/s two-step SAR ADC with background bit-weight calibration using a time-domain proximity detector

Y Zhou, B Xu, Y Chiu - IEEE Journal of Solid-State Circuits, 2015 - ieeexplore.ieee.org
A 12 bit 160 MS/s two-step pipelined SAR ADC was fabricated in a 40 nm CMOS low-
leakage digital process. A background bit-weight calibration exploiting the comparator …

A 550- 10-b 40-MS/s SAR ADC With Multistep Addition-Only Digital Error Correction

SH Cho, CK Lee, JK Kwon… - IEEE Journal of Solid-State …, 2011 - ieeexplore.ieee.org
A speed-enhanced 10-b asynchronous SAR ADC with multistep addition-only digital error
correction (ADEC) is presented with a straightforward DAC switching algorithm. The …

A 1.5 mW 68 dB SNDR 80 Ms/s 2 Interleaved Pipelined SAR ADC in 28 nm CMOS

F van der Goes, CM Ward, S Astgimath… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
This paper presents a power-efficient 80 MS/s, 11 bit ENOB ADC. It is realized in 28 nm
CMOS and is based on two interleaved pipelined SAR ADCs. It includes an on-chip …

An 8-b 400-MS/s 2-b-per-cycle SAR ADC with resistive DAC

H Wei, CH Chan, UF Chio, SW Sin… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
An 8-b 400-MS/s 2-b-per-cycle (2 b/C) successive approximation register (SAR) analog-to-
digital converter (ADC) is fabricated in 65-nm CMOS. With the implementation of a low …

A 0.024mm2 8b 400MS/s SAR ADC with 2b/cycle and resistive DAC in 65nm CMOS

H Wei, CH Chan, UF Chio, SW Sin… - … Solid-State Circuits …, 2011 - ieeexplore.ieee.org
The successive-approximation (SA) algorithm is traditionally used for low-bandwidth
applications because it requires n clock cycles or more to obtain n-bit resolution. However …

A 2.3 mW 10-bit 170 MS/s two-step binary-search assisted time-interleaved SAR ADC

SS Wong, UF Chio, Y Zhu, SW Sin… - IEEE journal of solid …, 2013 - ieeexplore.ieee.org
This paper presents the architecture of a 10b 170 MS/s two-step binary-search assisted time-
interleaved SAR ADC. The front-end stage of this ADC is built with a 5b binary-search ADC …

High-capacity coherent DCIs using pol-muxed carrier and LO-less receiver

R Kamran, S Naaz, S Goyal, S Gupta - Journal of Lightwave …, 2020 - opg.optica.org
Commonly used 4-level pulse amplitude modulation (PAM-4) scheme limits the amount of
data traffic that can be handled by the PAM-4 based data center interconnects (DCIs) …

A 12b 250 MS/s pipelined ADC with virtual ground reference buffers

HH Boo, DS Boning, HS Lee - IEEE Journal of Solid-State …, 2015 - ieeexplore.ieee.org
The virtual ground reference buffer (VGRB) technique is introduced as a means to improve
the performance of switched-capacitor circuits. The technique enhances the performance by …

A 10-bit 300-MS/s pipelined ADC with digital calibration and digital bias generation

BN Fang, JT Wu - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
A 10-bit pipelined ADC was fabricated using a 65 nm CMOS technology. To reduce power
consumption, switching opamps are used. These switching opamps are designed to have a …