The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

Abstract Wide bandgap GaN/AlGaN/GaN/SOI high-electron-mobility transistors (GaN/Si
HEMTs) have recently grabbed interest in the semiconductor field as outstanding …

Investigations on thin-film flow play a vital role in the field of optoelectronics and magnetic
devices. Thin films are reasonably hard and thermally stable but quite fragile. The thermal …

The epitaxy of AlGaN on metallic substrates exhibits numerous advantages including
flexibility, vertical carrier injection, and enhanced heat dissipation for optoelectronic devices; …

We report the electrical characteristics of GaN-based high electron mobility transistors
(HEMTs) operated on various substrates/films. For the detailed investigation and …

Substrate transfer technology is a common way to prepare high-power infrared light emitting
diode (IRLED), which seriously affects the photoelectric performance and reliability of LED …

Flexible AlGaInP-based red light-emitting diodes (LEDs) hold tremendous potential to
revolutionize wearable displays. In this work, we propose a method of preparing thin film red …

Phase change materials (PCMs) are used to cool high-power-density electronic devices
because of their high latent heat and chemical stability. However, their low thermal …

This study investigates the influence of local substrate removal and the implementation of a
backside Al heat dissipation layer on the radio frequency (RF) performance of GaN-on-Si …

The ohmic contact of n-GaAs having surface treatment was achieved at 300° C. It shows that
surface treatment makes the GaAs easier to form an ohmic contact with Ni/Au/Ge/Ni/Au …