Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V‐1 s‐1 and Excellent Stability for Replacing Current …
MH Rabbi, S Lee, D Sasaki, E Kawashima… - Small …, 2022 - Wiley Online Library
Highly ordered polycrystalline indium gallium oxide (PC‐IGO) film is obtained by the
crystallization of room temperature sputtered amorphous IGO on a hot plate at 350° C for 1 h …
crystallization of room temperature sputtered amorphous IGO on a hot plate at 350° C for 1 h …
A high performance operational amplifier using coplanar dual gate a-IGZO TFTs
We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous
indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19 …
indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19 …
Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
SK Dargar, VM Srivastava - Heliyon, 2019 - cell.com
In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor
consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure …
consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure …
TCAD simulation of dual-gate a-IGZO TFTs with source and drain offsets
We investigate the effect of offset between source/drain (S/D) and gate electrodes (both top
gate (TG) and bottom gate (BG)) on the electrical performance of dual-gate (DG) amorphous …
gate (TG) and bottom gate (BG)) on the electrical performance of dual-gate (DG) amorphous …
Impact of source-to-gate and drain-to-gate overlap lengths on performance of inverted staggered a-IGZO TFTs with an etch stopper
M Mativenga, F Haque, JG Um… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
We report a comprehensive study on the impact of source-to-gate (LS) and drain-to-gate
(LD) overlap lengths on the performance of amorphous indium-gallium-zinc-oxide (a-IGZO) …
(LD) overlap lengths on the performance of amorphous indium-gallium-zinc-oxide (a-IGZO) …
Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors
A Tari, WS Wong - Applied Physics Letters, 2018 - pubs.aip.org
Dual-dielectric SiO x/SiN x thin-film layers were used as back-channel and gate-dielectric
barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration …
barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration …
On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT
Channel thickness is a key parameter in determining the electrical characteristics of double-
gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is …
gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is …
4‐2: Student Paper: High‐Performance, Coplanar Polycrystalline InGaO Thin‐Film Transistor for Large‐Area, High‐Resolution AMOLED Display
MH Rabbi, S Lee, D Sasaki… - … Symposium Digest of …, 2022 - Wiley Online Library
We report a very simple hotplate crystallization technique to achieve the polycrystalline
InGaO (IGO) thin films at low temperature (< 400° C). The coplanar thin film transistor (TFT) …
InGaO (IGO) thin films at low temperature (< 400° C). The coplanar thin film transistor (TFT) …
Generation of InGaZnO Nanoparticle by Ar/O Plasma Exposure for Performance Improvement of Oxide TFTs
We studied the improvement in the performance of back-channel-etched oxide TFT with a
top gate (TG) by Ar/O plasma treatment. The generation of oxide nanoparticles in the offset …
top gate (TG) by Ar/O plasma treatment. The generation of oxide nanoparticles in the offset …
Split-Channel Dual-Gate High Voltage Thin Film Transistors
J Kong, X Li, C Liu, H Ou, J She… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
High-voltage thin film transistors (HVTFTs) have potential applications for driving high-
voltage devices. Drain offset is a typical HVTFT structure but degrades ON-current. In this …
voltage devices. Drain offset is a typical HVTFT structure but degrades ON-current. In this …