Defects with associated electron and nuclear spins in solid-state materials have a long
history relevant to quantum information science that goes back to the first spin echo …

Optically active color centers in nanodiamonds offer unique opportunities for generating and
manipulating quantum states of light. These mechanically, chemically, and optically robust …

Color centers in wide bandgap semiconductors are prominent candidates for solid-state
quantum technologies due to their attractive properties including optical interfacing, long …

GaN with atom defects is a rising material platform for single‐photon emitter (SPE) recently
due to their room‐temperature working conditions, high emission rate, narrow emission line …

Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for
harsh environment power electronics, micro and nano electromechanical systems, and …

Significant progress has been achieved with silicon carbide (SiC) high power electronics
and quantum technologies, both drawing upon the unique properties of this material. In this …

Copper-doped zinc sulfide (ZnS: Cu) exhibits down-conversion luminescence in the UV,
visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue …

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to
its commercial availability and established techniques for electrical and optical …

Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum
information processing hardware. Angle-etched nanodevices are emerging as a solution to …

Triangular cross-section silicon carbide (SiC) photonic devices have been studied as an
efficient and scalable route for integration of color centers into quantum hardware. In this …