In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

A scalable electrothermal large-signal AlGaN/GaN HEMTs model for both fundamental and
multiharmonics is presented based on the modified Angelov model. To obtain accurate …

Small-signal equivalent circuit (SSEC) models prove indispensable to a broad range of
activities, ranging from the understanding of device physics, the analysis of device …

In this paper, an accurate table-based large-signal model for AlGaN/GaN HEMTs accounting
for trapping-and self-heating-induced current dispersion is presented. The B-spline …

An improved large-signal modeling approach of GaN on Si devices for RF high-power
applications is presented. This approach accounts for the parasitic buffer loading effect …

This paper presents an accurate quasi-physical compact large-signal model for GaN high
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …

The work reported in this article explores a novel Particle Swarm Optimization (PSO) tuned
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …

This article reports a comparative study of two artificial neural network structures and
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …

This paper presents an efficient parameter extraction method applied to GaN high electron
mobility transistors. The procedure only relies on S-parameter measurements at cold bias …

In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor
(HEMT) with field plate engineering is investigated. A small signal equivalent circuit of …