It was theoretically and experimentally demonstrated that in metal/semiconductor Tamm
plasmon structures the probability of spontaneous emission can be increased despite losses …

GaN planar nanowires (NWs) are fabricated by selective area metal‐organic vapor phase
epitaxy using focused ion beam etching of trench pattern in the Si3N4 mask. Two …

We demonstrate that disorder in photonic crystals could lead to pronounced modification of
spontaneous emission rate in the frequency region corresponding to the photonic band gap …

A method for calculating the spontaneous-emission probability for arbitrary layered
structures in the waveguide mode has been developed based on the scattering matrix …

The change in probability of spontaneous emission for emitter placed in one-dimensional
photonic quasicrystal (optical Fibonacci lattice) was examined. When the dipole is placed in …

We have investigated Tamm plasmon structure and periodic metal-dielectric structures with
active organic CBP (N, N-dicarbazolyl-4, 4-biphenyl) layer. Tamm structure is based on SiO …

We study the probability of spontaneous emission enhancement of the dipole emitter
imbedded in the stratified metal-dielectric metamaterial, characterized by the hyperbolic …

Spontaneous-emission enhancement in a Tamm plasmon microcavity with an active region
with organic material 4.4'-bis (N-carbazolyl)-1.1'-biphenyl (CBP) is theoretically and …

We study Tamm plasmon structure based on GaAs/Al 0.95 GaAs distributed Bragg reflector
covered by thin silver layer, with active area formed by InAs quantum dots. We have …

We provide a theoretical and experimental investigation of a Purcell enhancement in a
Tamm-plasmon based microcavity structure with an organic (4, 4'-Bis (N-carbazolyl)− l, l' …