[HTML][HTML] Recent progress in red light-emitting diodes by III-nitride materials
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …
same material system. These emitters are expected to be next-generation red, green, and …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Demonstration of ultra-small (< 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (> 0.2%) for mini-displays
Ultra-small red micro-LEDs (< 10 μm) with measurable output power have proved difficult to
demonstrate. The smallest state-of-the-art red micro-LEDs (AlInGaP) to have exhibited a …
demonstrate. The smallest state-of-the-art red micro-LEDs (AlInGaP) to have exhibited a …
High-efficiency InGaN red micro-LEDs for visible light communication
In this study, we present a high-efficiency InGaN red micro-LED fabricated by the
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …
A red-emitting micrometer scale LED with external quantum efficiency> 8%
Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
An ultrahigh efficiency excitonic micro-LED
High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
InGaN-based red light-emitting diodes: from traditional to micro-LEDs
InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …
successfully commercialized in the last decades. Extending their spectral range to the red …
High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation
InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken
through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of …
through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of …
Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6%
We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …
Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
Red micro-light-emitting diodes (μLEDs) have been generated significant interest for the
next generation μLEDs displays. It has been shown that the external quantum efficiency …
next generation μLEDs displays. It has been shown that the external quantum efficiency …