Recent developments in p‐Type oxide semiconductor materials and devices

Z Wang, PK Nayak, JA Caraveo‐Frescas… - Advanced …, 2016 - Wiley Online Library
The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

KJ Saji, YPV Subbaiah, K Tian, A Tiwari - Thin Solid Films, 2016 - Elsevier
Tin monoxide (SnO) is considered as one of the most important p-type oxides available to
date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) …

Photovoltaic Properties of Two-Dimensional (CH3NH3)2Pb(SCN)2I2 Perovskite: A Combined Experimental and Density Functional Theory Study

Z Xiao, W Meng, B Saparov, HS Duan… - The Journal of …, 2016 - ACS Publications
We explore the photovoltaic-relevant properties of the 2D MA2Pb (SCN) 2I2 (where MA=
CH3NH3+) perovskite using a combination of materials synthesis, characterization and …

High‐performance vacuum‐processed metal oxide thin‐film transistors: a review of recent developments

HJ Kim, K Park, HJ Kim - Journal of the Society for Information …, 2020 - Wiley Online Library
Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor

S Yim, T Kim, B Yoo, H Xu, Y Youn, S Han… - … applied materials & …, 2019 - ACS Publications
Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin
monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 …

Electronic properties of the Sn1−xPbxO alloy and band alignment of the SnO/PbO system: a DFT study

N Kelaidis, S Bousiadi, M Zervos, A Chroneos… - Scientific Reports, 2020 - nature.com
Tin monoxide (SnO) has attracted attention due to its p-type character and capability of
ambipolar conductivity when properly doped, properties that are beneficial for the realization …

High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin (II) bis (tert‐amyloxide)

A Mameli, JD Parish, T Dogan… - Advanced Materials …, 2022 - Wiley Online Library
Spatial atomic layer deposition (sALD) of p‐type SnO is demonstrated using a novel liquid
ALD precursor, tin (II)‐bis (tert‐amyloxide), Sn (TAA) 2, and H2O as the coreactant in a …

[PDF][PDF] Transparent SnO–SnO2 p–n junction diodes for electronic and sensing applications

Z Wang, PK Nayak, A Albar, N Wei… - 2015 - repository.kaust.edu.sa
The pn junction is a simple but versatile structure used in many electronic devices such as
diodes, junction transistors, solar cells and light-emitting diodes.[1] Apart from the rectifying …

Material design of new p-type tin oxyselenide semiconductor through valence band engineering and its device application

T Kim, B Yoo, Y Youn, M Lee, A Song… - … applied materials & …, 2019 - ACS Publications
This paper reports a new p-type tin oxyselenide (SnSeO), which was designed with the
concept that the valence band edge from O 2p orbitals in the majority of metal oxides …

Tin oxide-based thin-film transistors and their circuits

H Cao, L Liang - Tin Oxide Materials, 2020 - Elsevier
Metal-oxide-semiconductor thin-film transistors (TFTs) have gained ever-increasing interests
because of a broad array of emerging applications such as flat panel displays, electronic …