The discovery of 2D layered MoSi2N4 and WSi2N4 without knowing their 3D parents by
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …

Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …

Abstract 2D materials van der Waals heterostructures (vdWHs) provide a revolutionary route
toward high‐performance solar energy conversion devices beyond the conventional silicon …

The Schottky–Mott (S–M) limit based on the S–M rule is often used to evaluate the Schottky
barrier height (SBH) at metal–semiconductor (MS) van der Waals (vdW) contacts but fails at …

The combination of graphene (GR) and monolayer MoSi2N4 has attracted much attention;
however, the comprehension of its electrical contact modulation is still not fully explored …

Monolayer MSi2N4 (M= Mo, W) has been fabricated and proposed as a promising channel
material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the …

We discuss and examine the stability, electronic properties, and transport characteristics of
asymmetric monolayers XWGeN2 (X= O, S, Se, Te) using ab initio density functional theory …

van der Waals heterostructures (vdWHs) provide a new strategy to broaden the application
of two-dimensional (2D) materials in novel nanodevices. Based on first-principles …

Janus structures with the breaking of out-of-plane mirror symmetry have gained intensive
attention. Here, on the basis of first principles, we not only investigate the recently …

High-performance semiconductor devices require ohmic contact (OhC) with low contact
resistance, which are widely associated with weak Fermi level pinning (FLP) effects …