Recent advances in germanium emission
The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …
type doping. In this paper, we review the recent progress that has been reported in the study …
Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition
YH Kil, HD Yang, JH Yang, AH Park, S Kang… - Materials science in …, 2013 - Elsevier
Phosphorus-doped n-type Ge layers were grown on p-type Si (100) wafers (8 in. in diameter,
resistivity 5–15 Ω cm) using rapid thermal chemical vapor deposition (RTCVD). The surface …
resistivity 5–15 Ω cm) using rapid thermal chemical vapor deposition (RTCVD). The surface …
Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate
YH Kil, HD Yang, JH Yang, JH Kim, JY Jung… - Journal of the Korean …, 2013 - Springer
A boron doped p-type Ge layer has been grown on an n-type Si (100) wafer (8 inch in
diameter, resistivity= 5∼ 15 Ω· cm) by using. The top surface roughness and the thickness of …
diameter, resistivity= 5∼ 15 Ω· cm) by using. The top surface roughness and the thickness of …
Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD
YH Kil, HD Yang, JH Yang, S Kang, TS Jeong… - Journal of the Korean …, 2014 - Springer
Boron-doped p-type Ge layers were grown on n-type Si (100) wafers at various boron
doping concentrations by using Rapid Thermal Chemical Vapor Deposition. The root-mean …
doping concentrations by using Rapid Thermal Chemical Vapor Deposition. The root-mean …