Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors
The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)
The potential of micro and nano electromechanical systems (M and NEMS) has expanded
due to advances in materials and fabrication processes. A wide variety of materials are now …
due to advances in materials and fabrication processes. A wide variety of materials are now …
Proton-induced displacement damage and total-ionizing-dose effects on silicon-based MEMS resonators
The response of silicon-based microelectromechanical systems resonators to proton
irradiation is determined by the combined effects of displacement damage and total ionizing …
irradiation is determined by the combined effects of displacement damage and total ionizing …
Gamma radiation induced effects on the performance of piezoresistive pressure sensors fabricated using different technologies
V Belwanshi, S Philip, A Topkar - IEEE Transactions on Nuclear …, 2019 - ieeexplore.ieee.org
We have carried out experimental investigation of the effect of gamma radiation on the
performance of piezoresistive pressure sensors realized using different fabrication …
performance of piezoresistive pressure sensors realized using different fabrication …
[HTML][HTML] Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms
We report on the measurement and analysis of energetic heavy ion radiation effects on the
mechanical properties of silicon carbide (SiC) crystals, by exploiting a vertical stack of …
mechanical properties of silicon carbide (SiC) crystals, by exploiting a vertical stack of …
Near-surface electronic contribution to semiconductor elasticity
The influence of the carrier concentration on the elasticity is measured for a microscale
silicon resonator. UV radiation is used to generate a surface charge that gates the …
silicon resonator. UV radiation is used to generate a surface charge that gates the …
Surface carrier concentration effect on elastic modulus of piezoelectric MEMS silicon cantilevers
This paper provides experimental observation of the variation of the silicon elastic modulus
with changing near surface carrier concentration. A piezoresistive MEMS cantilever is used …
with changing near surface carrier concentration. A piezoresistive MEMS cantilever is used …
Dose-rate effects on the total-ionizing-dose response of piezoresistive micromachined cantilevers
Total-ionizing-dose-induced resonance frequency shifts in piezoresistive micromachined
cantilevers are experimentally shown to be dose-rate dependent. Devices were irradiated to …
cantilevers are experimentally shown to be dose-rate dependent. Devices were irradiated to …
Energetic ion radiation effects on a silicon carbide (SiC) multimode resonating diaphragm
We report on measuring radiation effects of energetic oxygen ions on silicon carbide (SiC)
diaphragm resonators. Micromachined SiC diaphragms (1 mm× 1 mm× 2μm) vibrating at …
diaphragm resonators. Micromachined SiC diaphragms (1 mm× 1 mm× 2μm) vibrating at …
Dopant-Type and Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers
Lighter doping, pretreatment (exposure to hydrogen in a steam bath), and lower dose rate
are each found to exacerbate 10-keV X-ray-induced negative frequency shifts and increase …
are each found to exacerbate 10-keV X-ray-induced negative frequency shifts and increase …