Germanium-based photodetector is a key component in silicon based photonics because of
its unique properties of response at telecommunication band and compatibility with CMOS …

While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal
quality of bulk Ge remains much superior, which provides an effective method to study the …

In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier
MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric …

To speed up the performance of the device with scaling down the physical size, steep
switching has become the major concern for reduction in subthreshold slope. In this paper …

We successfully study the warpage after wafer-to-wafer (W2W) bonding by the experiments
and the full wafer model simulation. Furthermore, the effect of the dicing process on the …

The impact of channel thickness on the negative-bias temperature instability (NBTI)
behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found …

We experimentally evaluate the influence of a hydrogen ion implantation (I/I) dose on the
physical and electrical properties of Ge-on-insulator (GOI) films fabricated by the smart-cut …

The key enabling technology for 3D integration is Wafer-to-Wafer (WoW) bonding. One of
the main issues for the W2W bonding fabrication process is the wafer warpage. We explore …

Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-
effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of …

Advanced channel formation technologies called HEtero-layer-lift-off utilizing SiGe
heteroepitaxy have been realized for fabricating ultrathin body (UTB) Ge-on-insulator (GeOI) …