The impact of long-term memory effects on the linearizability of GaN HEMT-based power amplifiers

JL Gomes, LC Nunes, FM Barradas… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article presents how the emission time constant of deep-level traps is responsible for
the achievable linearity (linearizability) degradation of gallium nitride high electron mobility …

Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations

T Nishida, T Oishi, T Otsuka, Y Yamaguchi, M Tsuru… - Solid-State …, 2023 - Elsevier
The bias dependence of trap properties for GaN HEMTs with Fe-doped GaN layers was
investigated using low-frequency Y-parameters measurement in the two-port network. This …

Gallium nitride power amplifiers for Ka-band Satcom applications: Requirements, trends, and the way forward

R Giofrè, A Piacibello, P Colantonio… - IEEE Microwave …, 2023 - ieeexplore.ieee.org
The current trend in satellite communications is moving toward high carrier frequencies and
complex modulated signals, which have a nonconstant envelope, such as quadrature …

Neural Network-Based Coefficient Estimators for Memory Polynomial Digital Predistortion

ES Serinken, A Tunç, RA Vural… - 2024 20th International …, 2024 - ieeexplore.ieee.org
This paper compares several neural network algorithms using the digital predistortion (DPD)
technique for high-efficiency power amplifiers. The neural networks estimate the coefficients …

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs

R ElKashlan, H Yu, A Khaled, S Yadav… - … 2023-IEEE 53rd …, 2023 - ieeexplore.ieee.org
Thin channel GaN HEMTs intended for mm-wave operation suffer from increased on-
resistance (R ON) dispersion, limiting their large-signal performance. This work establishes …

A New Vision of the Role Played by Buffer Dopants on the Operation of AlGaN/GaN HEMTs

AS Alavijeh, JL Gomes, LC Nunes… - … Workshop on Integrated …, 2023 - ieeexplore.ieee.org
This paper presents a detailed vision of the role played by buffer doping in the operation of
AlGaN/GaN HEMT devices. The study employs transient two-dimensional TCAD simulations …

Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs

J Bremer, N Rorsman, M Thorsell - 2024 IEEE 36th …, 2024 - ieeexplore.ieee.org
A method to suppress trapping-related effects when performing IV characterizations of field
effect transistors is presented. Standard IV measurements usually utilize voltage sweeps …

Double-pulse load-pull for trapping Characterization of GaN Transistors

G Avolio, M Lorenzini, N Balovnev… - 2024 102nd ARFTG …, 2024 - ieeexplore.ieee.org
We propose an RF double-pulse measurement technique in combination with load-pull to
characterize dynamic effects in microwave transistors. An RF pre-pulse defines the Large …

[PDF][PDF] Characterisation of Dynamic Effects in Compact GaN Microwave Front Ends

A DIVINYI - 2024 - research.chalmers.se
GaN HEMT technology exhibits dynamic behaviour due to thermal and electrical memory
effects, which reduce the performance of GaN MMICs used in compact microwave front …

[PDF][PDF] Low-Complexity Digital Predistortion for 5G Massive MIMO and Handset Transmitters

X Wang - 2022 - researchrepository.ucd.ie
The demand for new wireless communication systems to support high mobility and low
latency necessitates a rethink of the architecture of wireless communication systems as well …