Self-aligned multi-dielectric-layer lift off process for laser diode stripes
JW Raring, DF Feezell, N Pfister - US Patent 8,728,842, 2014 - Google Patents
6.451157 B1 9/2002 Hubacek 2006/0086.319 A1 4/2006 Kasai et al. 6,635,904 B2 10/2003
Goetzetal. 2006/O126688 A1 6/2006 Kneissl 6,680.959 B2 1/2004 Tanabeet al. 2006 …
Goetzetal. 2006/O126688 A1 6/2006 Kneissl 6,680.959 B2 1/2004 Tanabeet al. 2006 …
High quality group-III metal nitride crystals, methods of making, and methods of use
W Jiang, MP D'evelyn, DS Kamber… - US Patent …, 2017 - Google Patents
High quality ammonothermal group III metal nitride crystals having a pattern of locally-
approximately-linear arrays of threading dislocations, methods of manufacturing high qual …
approximately-linear arrays of threading dislocations, methods of manufacturing high qual …
High-performance LED fabrication
High-performance light-emitting diode together with apparatus and method embodiments
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …
Method for manufacture of bright GaN LEDs using a selective removal process
AJ Felker, RL Aldaz, M Batres - US Patent 8,912,025, 2014 - Google Patents
US8912025B2 - Method for manufacture of bright GaN LEDs using a selective removal process
- Google Patents US8912025B2 - Method for manufacture of bright GaN LEDs using a selective …
- Google Patents US8912025B2 - Method for manufacture of bright GaN LEDs using a selective …
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition …
MP D'evelyn, JS Speck, DS Kamber… - US Patent …, 2022 - Google Patents
Techniques for processing materials in supercritical fluids including processing in a capsule
disposed within a high-pressure apparatus enclosure are disclosed. The disclosed …
disposed within a high-pressure apparatus enclosure are disclosed. The disclosed …
Transparent group III metal nitride and method of manufacture
W Jiang, D Ehrentraut, MP D'evelyn - US Patent 9,543,392, 2017 - Google Patents
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as
substrates for fabricating GaN devices for electronic and/or optoelectronic applications are …
substrates for fabricating GaN devices for electronic and/or optoelectronic applications are …
Method and system for dicing substrates containing gallium and nitrogen material
MR Krames, T Margalith, R Aldaz - US Patent 8,597,967, 2013 - Google Patents
The present disclosure relates generally to semiconductor techniques. More specifically,
embodiments of the present disclosure provide methods for efficiently dicing substrates …
embodiments of the present disclosure provide methods for efficiently dicing substrates …
Large area group III nitride crystals and substrates, methods of making, and methods of use
DW Cardwell, MP D'evelyn - US Patent 12,091,771, 2024 - Google Patents
Embodiments of the present disclosure include techniques related to techniques for
processing materials for manufacture of group-III metal nitride and gallium based substrates …
processing materials for manufacture of group-III metal nitride and gallium based substrates …
High-performance LED fabrication
High-performance light-emitting diode together with apparatus and method embodiments
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …
Ultrapure mineralizers and methods for nitride crystal growth
A Alexander, JW Nink Jr, MP D'evelyn - US Patent 9,299,555, 2016 - Google Patents
6,686,608 B1 2/2004 Takahira 2006/0177362 A1 8/2006 D'Evelyn et al. 6 764.297 B2
7/2004 Godwin et al. 2006/0207497 A1 9/2006 D'Evelyn et al. 6,765.240 B2 7/2004 Tischler …
7/2004 Godwin et al. 2006/0207497 A1 9/2006 D'Evelyn et al. 6,765.240 B2 7/2004 Tischler …