A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
S Mahapatra, N Parihar - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
A 3-D TCAD framework for NBTI, Part-II: Impact of mechanical strain, quantum effects, and FinFET dimension scaling
The TCAD framework developed in part-I of this paper is used to study the impact of fin
length (FL) and fin width (FW) scaling on interface trap generation (ΔV IT) during negative …
length (FL) and fin width (FW) scaling on interface trap generation (ΔV IT) during negative …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs
N Choudhury, U Sharma, H Zhou… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
An ultrafast (10ps delay) characterization method is used to measure threshold voltage shift
(ΔV T) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress …
(ΔV T) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress …
Bias temperature instability reliability in stacked gate-all-around nanosheet transistor
M Wang, J Zhang, H Zhou… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
In this paper, we report the bias temperature instability (BTI) reliability in stacked gate-all-
around (GAA) nanosheet (NS) devices. We show that, in addition to its superior intrinsic …
around (GAA) nanosheet (NS) devices. We show that, in addition to its superior intrinsic …
TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space
The time kinetics of hot carrier degradation (HCD) is modeled using a reaction diffusion drift
(RDD) framework. It is incorporated into Sentaurus Device TCAD and validated using …
(RDD) framework. It is incorporated into Sentaurus Device TCAD and validated using …
Analysis of sheet dimension (W, L) dependence of NBTI in GAA-SNS FETs
N Choudhury, T Samadder, R Tiwari… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Ultra-fast (Iuus delay) measured threshold voltage shift (ΔV T) due to Negative Bias
Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field …
Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field …
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
In this letter, we present an experimental study on the frequency (f) dependence of trap
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
Design and Analysis of a Low-Voltage VCO: Reliability and Variability Performance
T Azadmousavi, E Ghafar-Zadeh - Micromachines, 2023 - mdpi.com
This paper investigates an adaptive body biasing (ABB) circuit to improve the reliability and
variability of a low-voltage inductor–capacitor (LC) voltage-controlled oscillator (VCO). The …
variability of a low-voltage inductor–capacitor (LC) voltage-controlled oscillator (VCO). The …