A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
Diamond/GaN HEMTs: where from and where to?
JC Mendes, M Liehr, C Li - Materials, 2022 - mdpi.com
Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …
and electron mobility that translate in a tremendous potential for radio-frequency …
Integration of boron arsenide cooling substrates into gallium nitride devices
Thermal management is critical in modern electronic systems. Efforts to improve heat
dissipation have led to the exploration of novel semiconductor materials with high thermal …
dissipation have led to the exploration of novel semiconductor materials with high thermal …
Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design
J Liang, A Kobayashi, Y Shimizu, Y Ohno… - Advanced …, 2021 - Wiley Online Library
The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
High-resolution thermoreflectance imaging investigation of self-heating in AlGaN/GaN HEMTs on Si, SiC, and diamond substrates
A El Helou, P Komarov, MJ Tadjer… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-
power operation but suffer in reliability due to potentially damaging self-heating. In this …
power operation but suffer in reliability due to potentially damaging self-heating. In this …
Integration of GaN and diamond using epitaxial lateral overgrowth
R Ahmed, A Siddique, J Anderson… - … applied materials & …, 2020 - ACS Publications
Growth of single-crystalline GaN on polycrystalline diamond is reported for the first time. The
structure was achieved using a combined process including selective diamond growth on …
structure was achieved using a combined process including selective diamond growth on …
Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices
The impact of seeding of the diamond growth on the microstructural properties of GaN-on-
diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning …
diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning …
A scalable, flexible and transparent GaN based heterojunction piezoelectric nanogenerator for bending, air-flow and vibration energy harvesting
Flexible functional devices are extremely suitable for malleable, sustainable, and portable
applications such as smart clothing, flexible electronics and medical applications. Here, we …
applications such as smart clothing, flexible electronics and medical applications. Here, we …
Extreme mechanics of nanoscale diamond towards functional device applications
Diamond, as the hardest natural material on earth, usually breaks in a brittle manner, but
with the size reduced to the nanoscale regime, it can have surprisingly large elastic …
with the size reduced to the nanoscale regime, it can have surprisingly large elastic …