Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

J Lee, K Yang, JY Kwon, JE Kim, DI Han, DH Lee… - Nano …, 2023 - Springer
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

BH Kim, SH Kuk, SK Kim, JP Kim… - Advanced Electronic …, 2024 - Wiley Online Library
The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors
(FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation …

Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

H Liu, F Yu, B Chen, ZD Luo, J Chen, Y Zhang… - Materials …, 2024 - iopscience.iop.org
Ferroelectric HfO 2-based materials and devices show promising potential for applications in
information technology but face challenges with inadequate electrostatic control, degraded …

Study of Endurance Performance of SiO Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfOTEXPRESERVE1 Ferroelectric Layer

A Agarwal, AM Walke, N Ronchi… - … on Electron Devices, 2024 - ieeexplore.ieee.org
By using high-speed electrical measurements, we evaluate the endurance and retention
performance of the Si channel ferroelectric transistor (FeFET) having SiO interfacial layer (IL) …

Tailoring of Ferroelectric Coercive Field and Polarization with Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure

G Park, AH Nguyen, MC Nguyen… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack
made of Hf x Zr 1-x O 2 (HZO) with different compositions were reported. Compared to the …