Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

Group III nitrides are attracting considerable attention as promising materials for a variety of
applications due to their wide bandgap, high electron mobility, high thermal stability, and …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

In this work, AlGaN double channel heterostructure is proposed and grown by metal organic
chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high …

Superparamagnetic iron oxide nanoparticles (SPIONs) are one of the most versatile and
safe nanoparticles in a wide variety of biomedical applications. In the past decades …

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-
enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

Current collapse is a phenomenon that increases the channel resistance during the
switching process when the high gate and drain voltages are applied. The effect can be …

AlGaN/GaN metal–insulator-semiconductor high-electron-mobility transistors (MISHEMTs)
have been demonstrated with 22 nm thick vertically ordered (VO) h-BN by high-power …

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …