Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …

This letter reports-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 (AlGaO/GaO) heterostructure FETs (HFETs)
with significant improvement of peak transconductance (gm), current and power gain cutoff …

We propose and demonstrate the use of a β-(Al x Ga 1–x) 2 O 3 capping layer to achieve
increased breakdown voltage, V BR, and V BR 2/R ON figure of merit in β-Ga 2 O 3 Schottky …

High crystalline quality thick β-Ga 2 O 3 drift layers are essential for multi-kV vertical power
devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high …

In this work, we report a study of the temperature dependent pulsed current voltage and RF
characterization of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 hetero-structure FETs (HFETs) before and …

ABSTRACT β-Gallium oxide (β-Ga2O3) is an emerging wide bandgap semiconductor with
potential applications in power and RF electronic systems. Previous theoretical calculation …

Abstract (Al x Ga 1− x) 2 O 3 is a novel ultra‐wide bandgap semiconductor with the potential
to dominate future power electronics industries. High‐performance devices demand high Al …

In recent years, ultra-wide bandgap semiconductors have increasingly moved into scientific
focus due to their outstanding material properties, making them promising candidates for …