In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

Hydrogen is, in principle, the simplest impurity in semiconductor materials. It is a common
constituent of many chemicals and gases used in the growth and processing of …

A review is given of what has been learned from electron paramagnetic resonance (EPR)
and localized vibrational mode (LVM) spectroscopy concerning isolated lattice vacancies …

Ионная имплантация является в настоящее время основным методом создания
легированных слоев полупроводников. Она обладает рядом неоспоримых …

The basic results of the studies of defect–impurity interaction in implanted silicon are
presented. Factors affecting the way in which quasichemical reactions proceed—namely …

We report on a high-resolution photoluminescence and absorption study with the application
of external stress and magnetic fields on the 0.97-eV (G) line. We determine the symmetry of …

Ion implantation in silicon with doses below the amorphization threshold can lead to the
formation of dislocations after high-temperature annealing. We have studied this for implants …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Local density functional calculations are carried out on models of tri-and tetra-self-interstitial
clusters in Si. Electrical levels and local vibrational modes (LVMs) of the defects are found …

A review is given of what has been learned from EPR studies over the last≈ 35 years
concerning vacancies and interstitials in silicon. Lattice vacancies are well understood, their …