[HTML][HTML] Quantum Dots for Resistive Switching Memory and Artificial Synapse
G Kim, S Park, S Kim - Nanomaterials, 2024 - mdpi.com
Memristor devices for resistive-switching memory and artificial synapses have emerged as
promising solutions for overcoming the technological challenges associated with the von …
promising solutions for overcoming the technological challenges associated with the von …
Enhanced ethanol gas detection using TiO2 nanorods dispersed in cholesteric liquid crystal: Synthesis, characterization, and sensing performance
RS Pathinti, SG Dasari, B Gollapelli, S Gogula… - Journal of Alloys and …, 2024 - Elsevier
This research presents an innovative approach for ethanol gas detection by utilizing a
cholesteric liquid crystal (CLC) dispersed with titanium dioxide nanorods (TiO 2 NRs) …
cholesteric liquid crystal (CLC) dispersed with titanium dioxide nanorods (TiO 2 NRs) …
Bipolar resistive switching behavior of PVA/g-C3N4 quantum dots hybrid thin films
Z Jiao, X Zhou, X Lan, H Zong, Y Jing, B Liu… - Journal of Alloys and …, 2024 - Elsevier
Graphite-phase carbon nitride quantum dots (gC 3 N 4 QDs) have garnered widespread
attention and considerable research interest as active media for resistive random-access …
attention and considerable research interest as active media for resistive random-access …
Onset and microscopic origin of resistive random-access memory characteristics on low-cost thermally treated mixed phase CuxO (x= 1, 2) on Cu sheet
We demonstrated the resistive random-access memory (RRAM) characteristics in cost-
efficient, single-step, and in-situ grown nanostructured mixed-phase Cu x O (x= 1, 2) thin …
efficient, single-step, and in-situ grown nanostructured mixed-phase Cu x O (x= 1, 2) thin …
Enhancing Resistive Switching Characteristics of MoS2-based Memristor through O2 Plasma Irradiation-Induced Defects
In this work, we report the tuning of resistive switching properties in MoS2-based memristors
through varying durations of oxygen plasma exposure. Electrical transport measurements of …
through varying durations of oxygen plasma exposure. Electrical transport measurements of …