Abstract Nanoscale Metal-Oxide-Semiconductor (MOS) capacitors have emerged as
versatile building blocks in photonics, enabling a wide range of applications, from optical …

The simulation of silicon-based light-emitting and photodetectors nanodevices using
computer algebra became a challenge. These devices couple the hyperbolic equations of …

The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum
structures has become feasible over the last decades, and the field is continuously …

We compare two extraction methods based on the Y-function technique to extract the
massive (> 100 kΩ) series resistance observed in SOI-MOSFET devices. A part the …

In the efforts to address the need for developing ultra-fast computers based on combined
electronic and optical signal processing using silicon-based nanoscale devices, new types …

The respective transfer characteristics of the ultrathin body (UTB) and gate recessed
channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and …

Nanoscale MOSFETs Gate-Recessed Channel (GRC) device with a silicon channel
thickness (t SI) as low as 2.2 nm was first tested at room temperature for functionality check …

Nanoscale Gate‐Recessed Channel (GRC) Fully Depleted‐(FD‐) SOI MOSFET device with
a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for …

Two kinds of Fully Depleted Silicon-On-Insulator (FD-SOI) MOSFETs were electrically
measured at 300K and at 77K and compared. Both the devices, Ultra-Thin Body (UTB) and …

Nanoscale Gate-Recessed Channel (GRC) Fully Depleted-(FD-) SOI MOSFET device with a
silicon channel thickness (𝑡Si) as low as 2.2 nm was first tested at room temperature for …