[图书][B] Alloy phase diagrams

H Okamoto, ME Schlesinger, EM Mueller - 2016 - dl.asminternational.org
This article defines crystallographic terms and concepts, including crystal structure, unit cell,
structure symbols, lattice, space-group notation, and atom position. It schematically …

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

MH Du, J Yan, VR Cooper… - Advanced Functional …, 2021 - Wiley Online Library
Abstract MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators,
offering a promising materials platform for realizing exotic topological quantum states …

Tellurium treatment for the modification of sulfide inclusions and corresponding industrial applications in special steels: a review

X Xu, Q Tian, T Hu, D Ji, Q Qian… - steel research …, 2023 - Wiley Online Library
Tellurium treatment is used to control the morphology of manganese sulfide (MnS)
inclusions, reduce the mechanical anisotropy, and improve the machinability of sulfur …

Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors

S Mori, H Tanimura, T Ichitsubo… - ACS applied materials & …, 2023 - ACS Publications
MnTe is considered a promising candidate for next-generation phase change materials
owing to the reversible and nonvolatile phase transformation between its α and β'phases by …

Reversible displacive transformation in MnTe polymorphic semiconductor

S Mori, S Hatayama, Y Shuang, D Ando… - Nature …, 2020 - nature.com
Displacive transformation is a diffusionless transition through shearing and shuffling of
atoms. Diffusionless displacive transition with modifications in physical properties can help …

Structural evolution of high‐performance Mn‐alloyed thermoelectric materials: a case study of SnTe

Q Sun, ZY Chen, M Li, XL Shi, SD Xu, Y Yin… - Small, 2021 - Wiley Online Library
Mn alloying in thermoelectrics is a long‐standing strategy for enhancing their figure‐of‐merit
through optimizing electronic transport properties by band convergence, valley perturbation …

Spin-wave measurements on hexagonal of -type structure by inelastic neutron scattering

W Szuszkiewicz, E Dynowska, B Witkowska… - Physical Review B …, 2006 - APS
MnTe with a hexagonal structure of NiAs type is an antiferromagnetic semiconductor below
the Néel temperature TN= 310 K. The spin-wave excitations of a MnTe single crystal have …

Phonons, magnons, and lattice thermal transport in antiferromagnetic semiconductor MnTe

S Mu, RP Hermann, S Gorsse, H Zhao, ME Manley… - Physical Review …, 2019 - APS
The antiferromagnetic semiconductor MnTe has recently attracted attention for spintronics
and high-performance thermoelectric applications. However, little is known about its …

Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on -plane substrates

D Jain, HT Yi, AR Mazza, K Kisslinger, MG Han… - Physical Review …, 2024 - APS
In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic
topological insulator (IMTI) family [MnTe] m [Bi 2 Te 3] n, which hosts a wide range of …

Application of tellurium in free-cutting steels

P Shen, Q Yang, D Zhang, Y Wu, J Fu - Journal of Iron and Steel Research …, 2018 - Springer
Te is widely used in iron and steel industry. After adding a certain amount of Te in the steel,
many physical and chemical properties can be improved. As a free-cutting element, a small …