An overview on InN nanowires, fabricated using either a catalyst-free molecular beam
epitaxy method or a catalyst assisted chemical vapor deposition process, is provided …

The ultrafast coupling dynamics of coherent optical phonons and the photoexcited electron-
hole plasma in the indirect gap semiconductor GaP are investigated by experiment and …

III-nitride nanowires (NWs) were grown on Si (111) without catalyst by plasma-assisted
molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology …

We present Raman scattering measurements on wurtzite InN over a temperature range from
80 to 660 K. To investigate all phonon modes of the wurtzite structure, measurements were …

We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and …

We report a Raman scattering determination of the electron density in InN nanowires from
the analysis of longitudinal optical-phonon-plasmon coupled modes. A Raman peak …

Three-dimensional III-nitride micro-structures are being developed as a promising candidate
for the future opto-electrical devices. In this study, we demonstrate a quick and straight …

High quality InN nanoparticles are grown using an atmospheric chemical vapour deposition
technique via a self-seeded catalytic approach in the temperature range of 580–650° C. In …

Nano-and microstructures of phase-pure cubic boron nitride (c-BN) are synthesized by
employing nanosecond pulsed-laser annealing techniques at room temperature and …

InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …