Online junction temperature (T j) measurement enables robust power converter operations
by providing overtemperature protection and condition monitoring of the power devices. For …

This article proposes a new complete condition monitoring method which can independently
monitor both the threshold voltage drift and the packaging degradation accurately by …

The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide
(SiC) MOSFETS junction temperature measurement for over-temperature protection and …

The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power
electronics converters. In order to improve the reliability of IGBTs, various measurements are …

In this article, an in situ SiC mosfet degradation monitoring method using readily available
converter sensors is presented. Device's drain-source resistance in saturation and ohmic …

AC power cycling tests allow the most realistic reliability assessment by applying close to
real stress to the device or module under test to meet functional safety standards, which is …

As automotive manufacturers move toward silicon carbide (SiC) MOSFET-based traction
inverters, practical online switch condition monitoring solutions are crucial to address …

The p-GaN gate technology is commonly implemented to achieve normally OFF gallium
nitride (GaN) devices. Nonetheless, the threshold voltage instability under OFF-state stress …

Gate-oxide degradation is a concern in silicon carbide (SiC) MOSFETs especially in safety-
critical applications such as aerospace and electric vehicles (EVs). To address this concern …

Harsh operating environment and high temperature swings introduce die and packaging
related degradations in SiC MOSFETs causing potential system failures. This paper …