Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

In this paper, we report state-of-the-art high frequency performance of GaN-based high
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …

Nanoscale semiconductor materials have been extensively investigated as the channel
materials of transistors for energy-efficient low-power logic switches to enable scaling to …

The evolution of electronics has largely relied on downscaling to meet the continuous needs
for faster and highly integrated devices. As the channel length is reduced, however, classic …

We report vertical GaN-on-GaN pn diodes with a breakdown voltage (BV) of 1.7 kV and a
low differential specific ON-resistance of 0.55 with current spreading considered (or 0.4 …

This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …

In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors
(HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template on a 4-in 4H …