Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
[图书][B] Atomic force microscopy
P Eaton, P West - 2010 - books.google.com
Atomic force microscopy is an amazing technique that allies a versatile methodology (that
allows measurement of samples in liquid, vacuum or air) to imaging with unprecedented …
allows measurement of samples in liquid, vacuum or air) to imaging with unprecedented …
Friction-induced nanofabrication: a review
As the bridge between basic principles and applications of nanotechnology, nanofabrication
methods play significant role in supporting the development of nanoscale science and …
methods play significant role in supporting the development of nanoscale science and …
Progress in micro-and nanopatterning via electrochemical lithography
FC Simeone, C Albonetti… - The Journal of Physical …, 2009 - ACS Publications
In this paper we present a critical overview on recent progress in electrochemical methods
for nanopatterning and nanofabrication. In the first part we consider recent advancements in …
for nanopatterning and nanofabrication. In the first part we consider recent advancements in …
Direct mapping of ionic transport in a Si anode on the nanoscale: time domain electrochemical strain spectroscopy study
Local Li-ion transport in amorphous silicon is studied on the nanometer scale using time
domain electrochemical strain microscopy (ESM). A strong variability of ionic transport …
domain electrochemical strain microscopy (ESM). A strong variability of ionic transport …
Electron tunneling characteristics on La0. 7Sr0. 3MnO3 thin-film surfaces at high temperature
We report on the electron tunneling characteristics on La 0.7 Sr 0.3 MnO 3 (LSM) thin-film
surfaces up to 580 C in 10− 3 mbar oxygen pressure, using scanning tunneling microscopy …
surfaces up to 580 C in 10− 3 mbar oxygen pressure, using scanning tunneling microscopy …
Optimisation of nanooxide mask fabricated by atomic force microscopy nanolithography: a response surface methodology application
The mutual and individual effects of ambient humidity, applied voltage and tip speed on
nanooxide masks fabricated by atomic force microscopy were investigated in a statistical …
nanooxide masks fabricated by atomic force microscopy were investigated in a statistical …
Controlling the shape and gap width of silicon electrodes using local anodic oxidation and anisotropic TMAH wet etching
A simple method for fabricating silicon electrodes with various shapes and gap widths was
designed using the special properties of anisotropic tetramethylammonium hydroxide …
designed using the special properties of anisotropic tetramethylammonium hydroxide …
3-D finite element calculation of electric field enhancement for nanostructures fabrication mechanism on silicon surface with AFM tip induced local anodic oxidation
B Theogene, J Cui, X Wang, W Wang, X Mei… - Integrated …, 2018 - Taylor & Francis
The atomic force microscope (AFM) can be used in dynamic tipping mode as an effective
lithography technique capable of manufacturing nanometer sized devices on the surface of …
lithography technique capable of manufacturing nanometer sized devices on the surface of …
UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre-and post-breakdown electrical measurements
In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has
been used to compare the measured electrical properties and breakdown (BD) on ultra thin …
been used to compare the measured electrical properties and breakdown (BD) on ultra thin …