Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

The pseudomorphic growth of Ge 1− x Sn x on Ge causes in-plane compressive strain,
which degrades the superior properties of the Ge 1− x Sn x alloys. Therefore, efficient strain …

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or
ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct …

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-
semiconductor technology would require the fabrication of p-and n-type doped regions for …

The individual and co-influence of the stoichiometry and the crystallography growth strain on
germanium-tin (GeSn) alloys are systematically investigated by employing density functional …

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by
manipulating the Se concentration via non-equilibrium material processing, ie ion …

The effect of flash lamp annealing on the crystal growth of amorphous germanium-tin (GeSn)
layer deposited on Ge-on-insulator wafer was investigated. It was found that the presence of …

Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-
generation nanoelectronics that can be fully integrated with silicon technology. To this day …

Thermal desorption of Ar implanted into germanium (with energies 100 keV and 150 keV,
fluence 2× 1016 cm-2) was studied. Sudden release of Ar was observed as narrow peaks in …

This chapter gives an overview where flash lamp annealing is used in semiconductor
applications. After a short introduction to defect engineering several use cases in the field of …