A 0.096-mm –20-GHz Triple-Path Noise- Canceling Common-Gate Common-Source LNA With Dual Complementary pMOS–nMOS Configuration

H Yu, Y Chen, CC Boon, PI Mak… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This article proposes a novel wideband commongate (CG) common-source (CS) low-noise
amplifier (LNA) with a dual complementary pMOS-nMOS configuration to provide a current …

A wideband noise-canceling CMOS LNA with enhanced linearity by using complementary nMOS and pMOS configurations

B Guo, J Chen, L Li, H Jin… - IEEE Journal of Solid-State …, 2017 - ieeexplore.ieee.org
A complementary noise-canceling CMOS low-noise amplifier (LNA) with enhanced linearity
is proposed. An active shunt feedback input stage offers input matching, while extended …

A CMOS wideband highly linear low-noise amplifier for digital TV applications

JY Bae, S Kim, HS Cho, IY Lee, DS Ha… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
<? Pub Dtl=""?> This paper presents a highly linear wideband differential low-noise amplifier
(LNA) for digital TV applications. The proposed LNA is a modified version of the wideband …

A Wideband Low-Power-Consumption 22–32.5-GHz 0.18- BiCMOS Active Balun-LNA With IM2 Cancellation Using a Transformer-Coupled Cascode-Cascade …

C Geha, C Nguyen… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A low-power-consumption wideband 0.18-μm BiCMOS active balun-low noise amplifier
(LNA) with linearity improvement technique for millimeter-wave applications is proposed …

A CMOS LNA using a harmonic rejection technique to enhance its linearity

J Yoon, C Park - IEEE Microwave and Wireless Components …, 2014 - ieeexplore.ieee.org
In this study, we design a differential low-noise amplifier (LNA) using a 0.18-μm RF CMOS
process. To improve its linearity, we propose a harmonic rejection technique using RC …

Investigation of mean-time-to-failure measurements from AlGaN/GaN high-electron-mobility transistors using Eyring model

S Chakraborty, TW Kim - Electronics, 2021 - mdpi.com
We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electron-
mobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions …

A 24-GHz RF transmitter in 65-nm CMOS for in-cabin radar applications

S Lee, Y Jeon, G Park, J Myung, S Lee, O Lee, H Moon… - Electronics, 2020 - mdpi.com
A 24-GHz direct-conversion transmitter is proposed for in-cabin radar applications. The
proposed RF transmitter consists of an I/Q up-conversion mixer, an I/Q local (LO) oscillator …

A high-gain wideband balun-LNA with multiple noise-optimized technique

J Li, Y Zhang, Z Wei, Y Cao, Z Li, X Tang… - AEU-International Journal …, 2024 - Elsevier
This article reports a high-gain wideband low-noise amplifier (LNA) with single ended input
and differential output for multi-standard wireless receiver operating in 0.2 to 7 GHz. The …

Ultra low-power low-noise amplifier designs for 2.4 GHz ISM band applications

TTN Tran - 2012 - dr.ntu.edu.sg
The wireless communication industry is currently experiencing tremendous growth. In
responding to the demand for a low-cost but high performance wireless front-end, many …

A TV receiver front-end with linearized LNA and current-summing harmonic rejection mixer

D Im, O Lee, I Nam - … Transactions on Circuits and Systems II …, 2016 - ieeexplore.ieee.org
A low-noise and highly linear wideband receiver front-end composed of the linearized low
noise amplifier and current-summing harmonic rejection mixer is implemented in a 0.18-μm …