Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

The realization of the surface code for topological error correction is an essential step
towards a universal quantum computer,–. For single-atom qubits in silicon,,–, the need to …

Atomically precise fabrication has an important role to play in developing atom‐based
electronic devices for use in quantum information processing, quantum materials research …

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …

Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum
computing due to their exceptionally long coherence times and high fidelities. However …

Sharply defined dopant profiles and low resistivity are highly desired qualities in the
microelectronic industry, and more recently, in the development of an all epitaxial Si: P …

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth
enable the patterning of highly phosphorus-doped silicon (Si: P) monolayers (ML) with …

The recent observation of ultralow resistivity in highly doped, atomic-scale silicon wires has
sparked interest in what limits conduction in these quasi-1D systems. Here we present …

Atomic-scale silicon wires, patterned by scanning tunneling microscopy (STM) and
degenerately doped with phosphorus (P), have attracted significant interest owing to their …

We investigate the ability to introduce strain into atomic-scale silicon device fabrication by
performing hydrogen lithography and creating electrically active phosphorus δ-doped silicon …