We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film
transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350° C on an …

High-k insulation materials can effectively reduce the operating voltage and leakage current
of TFT devices, improving device performance owing to their high dielectric constant and …

Metal oxide ion-gated transistors (MOIGTs) have garnered significant attention within the
sensing domain due to their potential for achieving heightened sensitivity while consuming …

The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide
(HfO2) high-κ gate dielectric has been demonstrated previously as one of promising …

Organic–inorganic (O–I) hybrid materials combine the great variability and interactions at the
molecular scale that have been demonstrated to have an impact on their properties …

Crystalline tin oxide has been investigated for industrial applications since the 1970s.
Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and …

The full‐solution‐processed oxide thin‐film transistor (TFT) array is successfully realized by
using ultrafast scanning diode laser annealing (USDLA). It integrates all solution‐processed …

SnO2 transistors show great promise as an alternative to existing In2O3-based transistors,
considering their abundance and similar electronic properties. However, they suffer from …

Ion‐gated transistors (IGTs) are extensively used in chemo‐and bio‐sensors as well as
intelligent sensors, that is, with neuromorphic computing functionality, exploiting their ion to …

We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin
oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The …