Low-temperature (260 C) solderless Cu–Cu bonding for fine-pitch 3-D packaging and heterogeneous integration

H Park, H Seo, Y Kim, S Park… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Low-temperature solderless Cu-Cu bonding is an important technology for advanced
packaging, such as fine-pitch 3-D packaging and heterogeneous integration. In this study …

3D Vision and Intelligent On-line Inspection in SMT Microelectronic Packaging: A Review

T Li, S Wang, Y Luo, J Wan, Z Luo… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
With the rapid advancements in surface mount technology (SMT), microelectronic packaging
products are becoming smaller, denser, and defect-free. This has led to stricter requirements …

DeFT: A deadlock-free and fault-tolerant routing algorithm for 2.5 D chiplet networks

E Taheri, S Pasricha, M Nikdast - 2022 Design, Automation & …, 2022 - ieeexplore.ieee.org
By interconnecting smaller chiplets through an interposer, 2.5 D integration offers a cost-
effective and high-yield solution to implement large-scale modular systems. Nevertheless …

[HTML][HTML] Investigating the preferential growth of Bi grains in Sn-Bi based solder under thermal aging

S Liang, H Jiang, Z Zhong, Y Xu, K Song - Journal of Materials Research …, 2024 - Elsevier
Snsingle bondBi based solders have attracted widespread attention due to their promising
applications in heterogeneous integration and three-dimensional microelectronic …

Nonlinear beamforming for Scanning Acoustic Microscopy Imaging through scattering surfaces

C Kupsch, M Wolf - 2023 IEEE International Ultrasonics …, 2023 - ieeexplore.ieee.org
Scanning Acoustic Microscopy (SAM) is a non-destructive evaluation technique that is
widely used in the semiconductor and microelectronics industries. Image quality and defect …

Cu–Cu Bonding Using Selective Cobalt Atomic Layer Deposition for 2.5-D/3-D Chip Integration Technologies

MJ Li, M Breeden, V Wang, J Hollin… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
The feasibility of using selective thermal cobalt metal (Co) atomic layer deposition (ALD) as
high density Cu-Cu interconnect bonding is demonstrated at a low temperature (200° C) and …

Role of Cu/SiO Rough Interface in TSV for High-Power Device Under Electromigration

W Lv, J Liu, X Lei, F Zhu - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Through silicon via (TSV) technology is considered as the most promising 3-D packaging
method due to its excellent electrical performance. However, the electromigration (EM) effect …

[PDF][PDF] Investigation of Cu‑Cu bonding for 2.5 D and 3D system integration using self‑assembled monolayer as oxidation inhibitor

M Lykova - 2022 - d-nb.info
Cu-Cu bonding is one of the most promising fine-pitch interconnect technologies with solder
elimination for 2.5 D and 3D system integration. This bonding technology has been …

Towards Selective Cobalt Atomic Layer Deposition for Chip-to-Wafer 3D Heterogeneous Integration

M Manley, ZJ Devereaux, V Wang… - 2023 IEEE 73rd …, 2023 - ieeexplore.ieee.org
The feasibility of a 3D bonding technology for ultra-dense input/output (I/O) interconnects
using cobalt selective atomic layer deposition (Co ALD) is explored with a preliminary …

Numerical Investigation on Microfluidic Electroless Deposition for Uniform Copper Pillar Microbumps Interconnection

Y Zhang, H Chen, H Fan, J Yang… - 2021 IEEE 71st …, 2021 - ieeexplore.ieee.org
The conventional thermo-compression bonding method in either solder-based or solder-less
approaches for the 3D chip integration lead to reliability issues including warpage …