Probing charge trapping and joule heating in graphene field-effect transistors by transient pulsing

H Ramamoorthy, R Somphonsane… - Semiconductor …, 2017 - iopscience.iop.org
We use pulsed electrical studies to investigate the various processes that limit the current
carrying capacity of graphene high frequency transistors. By investigating the transient …

Electron power loss in metal-oxide nanostructures in quantizing magnetic field

S Bhat, JS Bhat - Solid State Communications, 2022 - Elsevier
Hot-electron power loss via electron interaction with bulk longitudinal polar optical phonon
in metal-oxide two dimensional nanostructures in the presence of zero and finite quantizing …

[HTML][HTML] Quantum Oscillations of the Energy Loss Rate of Hot Electrons in Graphene at Strong Magnetic Fields

M Tsaousidou, SS Kubakaddi - Materials, 2023 - mdpi.com
We present a theoretical model for the calculation of the energy loss rate (ELR) of hot
electrons in a monolayer graphene due to their coupling with acoustic phonons at high …

Hot Carriers in CVD‐Grown Graphene Device with a Top h‐BN Layer

C Chuang, M Mineharu, N Matsumoto… - Journal of …, 2018 - Wiley Online Library
We investigate the energy relaxation of hot carriers in a CVD‐grown graphene device with a
top h‐BN layer by driving the devices into the nonequilibrium regime. By using the magnetic …

Energy relaxation of electrons impacts on channel quantization in nano-MOSFETs

LF Mao - Applied Physics A, 2014 - Springer
The effects of the rising electron temperature due to the energy relaxation on the
quantization of the inversion layer in a nano-metal–oxide–semiconductor field transistor …