Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

Z Wang - Microelectronic Engineering, 2019 - Elsevier
As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …

High-temperature adaptive through-silicon via with pyrolyzed carbon via-sealing plates for packaging 3D carbon nanostructure-based devices fabricated using C …

JH Kwak, W Cho, B Kim, T Kim, H Shin - Carbon, 2024 - Elsevier
Through-silicon via (TSV) is a key packaging technology that facilitates the 2.5 D/3D
integration of microelectromechanical system (MEMS) devices. Among various MEMS …

Nb–Nb direct bonding at room temperature for superconducting interconnects

M Fujino, Y Araga, H Nakagawa, Y Takahashi… - Journal of Applied …, 2023 - pubs.aip.org
Superconducting devices with high-density integration are required for applications, such as
high-performance detectors and quantum computing. Here, the direct bonding of Nb …

3D cryogenic interposer for quantum computing application

H Li, ACS Lau, N Jaafar, RCS Lee… - 2022 IEEE 72nd …, 2022 - ieeexplore.ieee.org
Conventional Cu through silicon via (TSV)(5× 50 μm) with Al metal lines on 300mm Si
substrate were fabricated and electrically tested at cryogenic temperatures down to 20mK in …

超导量子芯片硅穿孔填充技术

郑伟文, 栾添, 张祥 - 科技导报, 2024 - kjdb.org
超导量子计算是目前最有可能实现实际应用的量子计算方案之一, 多层堆叠是实现超导量子比特
大规模扩展的最佳方案. 介绍了超导量子芯片中硅穿孔(TSV) 填充工艺的特点并汇总概括了当前 …

Fabrication of through glass via (TGV) substrates using a pulse width modulated (PWM) vacuum suction system for molten solder filling

SH Chung, JY Park, YK Kim, SK Lee… - IEICE Electronics …, 2024 - jstage.jst.go.jp
In this study, we present a method for filling molten solder into through-glass via (TGV)
substrates using a pulse width modulated (PWM) vacuum suction system. The TGV …

面向超导量子器件的封装集成技术

俞杰勋, 王谦, 郑瑶, 宋昌明, 方君鹏, 吴海华, 李铁夫… - 电子与封装, 2023 - ep.org.cn
超导量子比特由于半导体工艺兼容性强, 可扩展潜力大, 易于操控, 读出与耦合,
是现阶段最有希望实现可扩展通用量子计算机的技术路线之一. 然而, 通用量子计算的实现需要 …

Through-silicon-via Architecture of 3D Integration for Superconducting Quantum Computing Application

J Yu, Q Wang, Y Zheng, C Song, J Fang… - 2023 IEEE 73rd …, 2023 - ieeexplore.ieee.org
As one of the mainstream technique routes to implement universal quantum computing,
superconducting qubit has been highly anticipated in recent years. However, the current …

Fabrication of al-based superconducting high-aspect ratio TSVS for quantum 3D integration

JA Alfaro-Barrantes, M Mastrangeli… - 2020 IEEE 33rd …, 2020 - ieeexplore.ieee.org
We describe a microfabrication process that, thanks to a specifically tailored sidewall profile,
enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) …

Through silicon via filling technologies in superconducting quantum

W ZHENG, T LUAN, X ZHANG - Science & Technology Review, 2024 - kjdb.org
Superconducting quantum is one of the leading candidates in the race to build a quantum
computer and multi-layer stacking may be the best solution for the superconducting qubits …